? semiconductor components industries, llc, 2015 january, 2015 ? rev. 9 1 publication order number: MBR41H100CT/d MBR41H100CT, nrvbb41h100ct series switch-mode power rectifier 100 v, 40 a features and benefits ? low forward voltage: 0.67 v @ 125 c ? low power loss/high efficiency ? high surge capacity ? 175 c operating junction temperature ? 40 a total (20 a per diode leg) ? guard?ring for stress protection ? nrvbb prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant ? MBR41H100CTh and mbrb41h100ct?1h are halide?free applications ? power supply ? output rectification ? power management ? instrumentation mechanical characteristics: ? case: epoxy, molded ? epoxy meets ul 94 v?0 @ 0.125 in ? weight (approximately): 1.9 grams (t o?220) 1.7 grams (d 2 pak) 1.5 grams (t o?262) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds to?220 case 221a style 6 3 4 1 1 3 2, 4 2 marking diagrams ayww b41h100x aka a = assembly location y = year ww = work week x = g or h g = pb?free package h = halide?free package aka = polarity designator www.onsemi.com i 2 pak (to?262) case 418d style 3 ayww b41h100x aka 3 4 1 2 3 4 1 d 2 pak 3 case 418b style 3 ayww b41h100g aka see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information
MBR41H100CT, nrvbb41h100ct series www.onsemi.com 2 maximum ratings (per diode leg) rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current (rated v r ) t c = 150 c i f(av) 20 a peak repetitive forward current (rated v r , square wave, 20 khz) t c = 145 c i frm 40 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 350 a operating junction temperature (note 1) t j +175 c storage temperature t stg 65 to +175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s controlled avalanche energy (see test conditions in figures 10 and 11) w aval 400 mj esd ratings: machine model = c human body model = 3b > 400 > 8000 v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. the heat generated must be less than the thermal conductivity from junction?to?ambient: dp d /dt j < 1/r ja . thermal characteristics (per diode leg) characteristic symbol value unit maximum thermal resistance junction?to?case junction?to?ambient r jc r ja 2.0 70 c/w electrical characteristics (per diode leg) characteristic symbol value unit maximum instantaneous forward voltage (note 2) (i f = 20 a, t c = 25 c) (i f = 20 a, t c = 125 c) (i f = 40 a, t c = 25 c) (i f = 40 a, t c = 125 c) v f 0.80 0.67 0.90 0.76 v maximum instantaneous reverse current (note 2) (rated dc voltage, t c = 125 c) (rated dc voltage, t c = 25 c) i r 10 0.01 ma product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. pulse test: pulse width = 300 s, duty cycle 2.0%.
MBR41H100CT, nrvbb41h100ct series www.onsemi.com 3 i f , instantaneous forward current (amps) figure 1. typical forward voltage figure 2. maximum forward voltage v f , instantaneous forward voltage (volts) 1000 1 0.1 0.4 0 0.2 1.0 t j = 150 c t j = 25 c 0.8 0.6 i r , maximum reverse current (amps) i r , reverse current (amps) figure 3. typical reverse current figure 4. maximum reverse current 20 0 v r , reverse voltage (volts) 1.0e?01 1.0e?02 1.0e?03 1.0e?06 1.0e?08 40 t j = 125 c t j = 150 c t j = 25 c i f , average forward current (amps) figure 5. current derating t c , case temperature ( c) 120 110 10 5 0 140 150 130 160 square wave dc p fo , average power dissipation (watts) 15 0 i o , average forward current (amps) 50 5 0 510 square figure 6. forward power dissipation 25 1.2 10 t j = 125 c 60 80 100 1.0e?07 1.0e?05 1.0e?04 20 0 v r , reverse voltage (volts) 1.0e?01 1.0e?02 1.0e?03 1.0e?06 1.0e?08 40 t j = 125 c t j = 150 c t j = 25 c 60 80 10 0 1.0e?07 1.0e?05 1.0e?04 170 180 100 i f , instantaneous forward current (amps ) v f , instantaneous forward voltage (volts) 1000 1 0.1 0.4 0 0.2 1.0 t j = 150 c t j = 25 c 0.8 0.6 1.2 10 t j = 125 c 10 15 20 30 35 dc 25 15 25 20 20 100 100 35 30 40 45 40 30 35 50 45
MBR41H100CT, nrvbb41h100ct series www.onsemi.com 4 c, capacitance (pf) 0 v r , reverse voltage (volts) 100 10 40 80 t j = 25 c figure 7. capacitance 100 20 60 10000 1000 r(t), transient thermal resistance figure 8. thermal response junction?to?ambient 100 0 0.1 0.00001 t 1 , time (sec) 1 0.0001 0.001 0.01 1 10 100 0.000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t), transient thermal resistance figure 9. thermal response junction?to?case 100 0 0.1 0.00001 t 1 , time (sec) 10 0.001 0.0001 0.001 0.01 1 10 100 0.000001 0.1 1 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.001 0.01 0.01
MBR41H100CT, nrvbb41h100ct series www.onsemi.com 5 mercury switch v d i d dut 10 mh coil +v dd i l s 1 bv dut i l i d v dd t 0 t 1 t 2 t figure 10. test circuit figure 11. current?voltage waveforms the unclamped inductive switching circuit shown in figure 10 was used to demonstrate the controlled avalanche capability of this device. a mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. when s 1 is closed at t 0 the current in the inductor i l ramps up linearly; and ener gy is stored in the coil. at t 1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at bv dut and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2 . by solving the loop equation at the point in time when s 1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total ener gy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the v dd power supply while the diode is in breakdown (from t 1 to t 2 ) minus any losses due to finite component resistances. assuming the component resistive elements are small equation (1) approximates the total energy transferred to the diode. it can be seen from this equation that if the v dd voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when s 1 was closed, equation (2). w aval 1 2 li 2 lpk bv dut bv dut v dd w aval 1 2 li 2 lpk equation (1): equation (2):
MBR41H100CT, nrvbb41h100ct series www.onsemi.com 6 ordering information device package shipping ? MBR41H100CTg to?220 (pb?free) 50 units / rail MBR41H100CTh to?220 (halide?free) 50 units / rail mbrb41h100ct?1g i 2 pak (pb?free) 50 units / rail mbrb41h100ct?1h (in development) i 2 pak (halide?free) 50 units / rail mbrb41h100ctt4g d 2 pak 3 (pb?free) 800 units / tape & reel nrvbb41h100ctt4g* d 2 pak 3 (pb?free) 800 units / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *nrvbb prefix for automotive and other applications requiring unique site and control change requirements; aec?q100 qualified a nd ppap capable.
MBR41H100CT, nrvbb41h100ct series www.onsemi.com 7 package dimensions to?220 case 221a?09 issue ah notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.415 9.66 10.53 c 0.160 0.190 4.07 4.83 d 0.025 0.038 0.64 0.96 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.024 0.36 0.61 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j style 6: pin 1. anode 2. cathode 3. anode 4. cathode
MBR41H100CT, nrvbb41h100ct series www.onsemi.com 8 package dimensions seating plane s g d ?t? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ?b? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b?01 thru 418b?03 obsolete, new standard 418b?04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w?w view w?w view w?w 123 d 2 pak 3 case 418b?04 issue k style 3: pin 1. anode 2. cathode 3. anode 4. cathode *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 5.080 dimensions: millimeters pitch 2x 16.155 1.016 2x 10.49 3.504
MBR41H100CT, nrvbb41h100ct series www.onsemi.com 9 package dimensions i 2 pak (to?262) case 418d issue d notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. ?t? w g k a c e v j h 123 4 seating plane d 3 pl dim min max min max millimeters inches a 0.335 0.380 8.51 9.65 b 0.380 0.406 9.65 10.31 c 0.160 0.185 4.06 4.70 d 0.026 0.035 0.66 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.094 0.110 2.39 2.79 j 0.013 0.025 0.33 0.64 s 0.390 ref 9.90 ref v 0.045 0.070 1.14 1.78 w 0.522 0.551 13.25 14.00 ?b? m b m 0.13 (0.005) t s f f 0.122 ref 3.10 ref k 0.500 0.562 12.70 14.27 style 3: pin 1. anode 2. cathode 3. anode 4. cathode p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 MBR41H100CT/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
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